Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 640,111
komad (u Tubi od 50) (bez PDV-a)
RSD 768,133
komad (u Tubi od 50) (s PDV-om)
50
RSD 640,111
komad (u Tubi od 50) (bez PDV-a)
RSD 768,133
komad (u Tubi od 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cena | Po cev |
---|---|---|
50 - 50 | RSD 640,111 | RSD 32.006 |
100 - 200 | RSD 613,984 | RSD 30.699 |
250+ | RSD 574,794 | RSD 28.740 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu