Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
10.4 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
10.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 5 V
Width
7.67mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.39mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
RSD 293
RSD 146,311 komadno (u pakovanju od 2) (bez PDV-a)
RSD 351
RSD 175,573 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
RSD 293
RSD 146,311 komadno (u pakovanju od 2) (bez PDV-a)
RSD 351
RSD 175,573 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
2 - 24 | RSD 146,311 | RSD 293 |
26+ | RSD 100,589 | RSD 201 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
10.4 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
10.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 5 V
Width
7.67mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.39mm
Zemlja podrijetla
China
Detalji o proizvodu