Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK IPD50R380CEAUMA1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Package Type
DPAK (TO-252)
Series
CoolMOS™ CE
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Maximum Gate Source Voltage
-30 V, +30 V
Length
6.73mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.22mm
Number of Elements per Chip
1
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Detalji o proizvodu
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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RSD 1.594
RSD 159,375 komadno (u pakovanju od 10) (bez PDV-a)
RSD 1.912
RSD 191,25 komadno (u pakovanju od 10) (s PDV-om)
Standard
10
RSD 1.594
RSD 159,375 komadno (u pakovanju od 10) (bez PDV-a)
RSD 1.912
RSD 191,25 komadno (u pakovanju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 10 - 40 | RSD 159,375 | RSD 1.594 |
| 50 - 490 | RSD 154,149 | RSD 1.541 |
| 500 - 990 | RSD 116,265 | RSD 1.163 |
| 1000+ | RSD 100,589 | RSD 1.006 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Package Type
DPAK (TO-252)
Series
CoolMOS™ CE
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Maximum Gate Source Voltage
-30 V, +30 V
Length
6.73mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.22mm
Number of Elements per Chip
1
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Detalji o proizvodu
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda