Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-247AC IRFP3710PBF

RS kataloški broj:: 541-1584brend: InfineonProizvođački broj:: IRFP3710PBFDistrelec Article No.: 30341352
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247AC

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.9mm

Typical Gate Charge @ Vgs

190 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.3mm

Height

20.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

RSD 462

RSD 462 Each (bez PDV-a)

RSD 555

RSD 555 Each (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-247AC IRFP3710PBF
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1RSD 462
2RSD 925
3RSD 1.387
4RSD 1.850
5RSD 2.103
6RSD 2.524
7RSD 2.945
8RSD 3.365
9RSD 3.786
10RSD 3.906
11RSD 4.297
12RSD 4.687
13RSD 5.078
14RSD 5.468
15RSD 5.741

RSD 462

RSD 462 Each (bez PDV-a)

RSD 555

RSD 555 Each (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-247AC IRFP3710PBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1RSD 462
2RSD 925
3RSD 1.387
4RSD 1.850
5RSD 2.103
6RSD 2.524
7RSD 2.945
8RSD 3.365
9RSD 3.786
10RSD 3.906
11RSD 4.297
12RSD 4.687
13RSD 5.078
14RSD 5.468
15RSD 5.741

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cena
1 - 4RSD 462
5 - 9RSD 421
10 - 14RSD 391
15 - 19RSD 383
20+RSD 370

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247AC

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.9mm

Typical Gate Charge @ Vgs

190 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.3mm

Height

20.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in