Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

RS kataloški broj:: 124-8828brend: InfineonProizvođački broj:: SPP80P06PHXKSA1
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

115 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.57mm

Transistor Material

Si

Forward Diode Voltage

1.6V

Height

15.95mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Malaysia

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

RSD 25.800

RSD 516,008 komad (u Tubi od 50) (bez PDV-a)

RSD 30.960

RSD 619,21 komad (u Tubi od 50) (s PDV-om)

Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

50

Dostupno u više komada 50
50RSD 25.800
100RSD 42.848
150RSD 64.272
200RSD 85.696
250RSD 104.835
300RSD 125.801
350RSD 146.768
400RSD 167.735
450RSD 188.702
500RSD 209.669
550RSD 230.636
600RSD 251.603
650RSD 272.570
700RSD 293.537
750RSD 314.504

RSD 25.800

RSD 516,008 komad (u Tubi od 50) (bez PDV-a)

RSD 30.960

RSD 619,21 komad (u Tubi od 50) (s PDV-om)

Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1
Informacije o stanju skladišta trenutno nisu dostupne.

50

Dostupno u više komada 50
50RSD 25.800
100RSD 42.848
150RSD 64.272
200RSD 85.696
250RSD 104.835
300RSD 125.801
350RSD 146.768
400RSD 167.735
450RSD 188.702
500RSD 209.669
550RSD 230.636
600RSD 251.603
650RSD 272.570
700RSD 293.537
750RSD 314.504

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo cev
50 - 50RSD 516,008RSD 25.800
100 - 200RSD 428,482RSD 21.424
250+RSD 419,338RSD 20.967

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

115 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.57mm

Transistor Material

Si

Forward Diode Voltage

1.6V

Height

15.95mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Malaysia

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više