IXYS Linear L2 N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2

RS kataloški broj:: 168-4584robna marka: IXYSProizvođački broj:: IXTN200N10L2
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Tehnička dokumentacija

Tehnički podaci

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

178 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-227

Series

Linear L2

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

830 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

25.07mm

Maximum Operating Temperature

+150 °C

Length

38.23mm

Typical Gate Charge @ Vgs

540 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

9.6mm

Zemlja podrijetla

Philippines

Detalji o proizvodu

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 1.305,89

KM 130,589 Each (In a Tube of 10) (bez PDV-a)

KM 1.527,89

KM 152,789 Each (In a Tube of 10) (s PDV-om)

IXYS Linear L2 N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2

10

Dostupno u više komada 10
10KM 1.305,89
20KM 2.611,78
30KM 3.917,66
40KM 5.223,55
50KM 6.529,44
60KM 7.835,33
70KM 9.141,21
80KM 10.447,10
90KM 11.752,99
100KM 13.058,88
110KM 14.364,76
120KM 15.670,65
130KM 16.976,54
140KM 18.282,43
150KM 19.588,31

KM 1.305,89

KM 130,589 Each (In a Tube of 10) (bez PDV-a)

KM 1.527,89

KM 152,789 Each (In a Tube of 10) (s PDV-om)

IXYS Linear L2 N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2
Informacije o stanju skladišta trenutno nisu dostupne.

10

Dostupno u više komada 10
10KM 1.305,89
20KM 2.611,78
30KM 3.917,66
40KM 5.223,55
50KM 6.529,44
60KM 7.835,33
70KM 9.141,21
80KM 10.447,10
90KM 11.752,99
100KM 13.058,88
110KM 14.364,76
120KM 15.670,65
130KM 16.976,54
140KM 18.282,43
150KM 19.588,31

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

178 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-227

Series

Linear L2

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

830 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

25.07mm

Maximum Operating Temperature

+150 °C

Length

38.23mm

Typical Gate Charge @ Vgs

540 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

9.6mm

Zemlja podrijetla

Philippines

Detalji o proizvodu

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više