Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
5.2mm
Maximum Operating Temperature
+150 °C
Width
4.19mm
Height
5.33mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
KM 31,68
KM 1,584 Each (In a Pack of 20) (bez PDV-a)
KM 37,07
KM 1,853 Each (In a Pack of 20) (s PDV-om)
Standard
20
KM 31,68
KM 1,584 Each (In a Pack of 20) (bez PDV-a)
KM 37,07
KM 1,853 Each (In a Pack of 20) (s PDV-om)
Standard
20
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
20 - 20 | KM 1,584 | KM 31,68 |
40 - 80 | KM 1,526 | KM 30,51 |
100+ | KM 1,428 | KM 28,55 |
Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
5.2mm
Maximum Operating Temperature
+150 °C
Width
4.19mm
Height
5.33mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.