Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
RSD 1.372
RSD 27,433 komad (isporučivo u Reel) (bez PDV-a)
RSD 1.646
RSD 32,92 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
RSD 1.372
RSD 27,433 komad (isporučivo u Reel) (bez PDV-a)
RSD 1.646
RSD 32,92 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po kolut |
---|---|---|
50 - 90 | RSD 27,433 | RSD 274 |
100 - 490 | RSD 23,514 | RSD 235 |
500+ | RSD 22,208 | RSD 222 |
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
Zemlja podrijetla
China
Detalji o proizvodu