Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
KM 58,67
KM 0,587 Each (Supplied on a Reel) (bez PDV-a)
KM 68,64
KM 0,687 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
100
KM 58,67
KM 0,587 Each (Supplied on a Reel) (bez PDV-a)
KM 68,64
KM 0,687 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
100
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po kolut |
---|---|---|
100 - 225 | KM 0,587 | KM 14,67 |
250 - 475 | KM 0,548 | KM 13,69 |
500 - 975 | KM 0,489 | KM 12,22 |
1000+ | KM 0,469 | KM 11,73 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.