Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
290 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
9.3mm
Detalji o proizvodu
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
RSD 11.627
RSD 1.163 komad (isporucivo u Tubi) (bez PDV-a)
RSD 13.952
RSD 1.395 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
10
RSD 11.627
RSD 1.163 komad (isporucivo u Tubi) (bez PDV-a)
RSD 13.952
RSD 1.395 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
10
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena |
---|---|
10 - 99 | RSD 1.163 |
100 - 499 | RSD 973 |
500 - 999 | RSD 901 |
1000+ | RSD 790 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
290 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
9.3mm
Detalji o proizvodu