STMicroelectronics STripFET H7 N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
STripFET H7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
315 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
180 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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RSD 1.549
RSD 774,665 komadno (u pakovanju od 2) (bez PDV-a)
RSD 1.859
RSD 929,598 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
RSD 1.549
RSD 774,665 komadno (u pakovanju od 2) (bez PDV-a)
RSD 1.859
RSD 929,598 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 2 - 8 | RSD 774,665 | RSD 1.549 |
| 10 - 98 | RSD 670,157 | RSD 1.340 |
| 100+ | RSD 616,597 | RSD 1.233 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
STripFET H7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
315 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
180 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda