Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
RSD 10.581
RSD 211,629 komad (u Tubi od 50) (bez PDV-a)
RSD 12.698
RSD 253,955 komad (u Tubi od 50) (s PDV-om)
50
RSD 10.581
RSD 211,629 komad (u Tubi od 50) (bez PDV-a)
RSD 12.698
RSD 253,955 komad (u Tubi od 50) (s PDV-om)
50
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po cev |
---|---|---|
50 - 50 | RSD 211,629 | RSD 10.581 |
100 - 450 | RSD 167,213 | RSD 8.361 |
500 - 950 | RSD 147,617 | RSD 7.381 |
1000 - 4950 | RSD 128,022 | RSD 6.401 |
5000+ | RSD 125,41 | RSD 6.270 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu