Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
87 nC @ 10 V
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.15mm
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
KM 233,52
KM 7,784 Each (In a Tube of 30) (bez PDV-a)
KM 273,22
KM 9,107 Each (In a Tube of 30) (s PDV-om)
30
KM 233,52
KM 7,784 Each (In a Tube of 30) (bez PDV-a)
KM 273,22
KM 9,107 Each (In a Tube of 30) (s PDV-om)
30
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po cijev |
---|---|---|
30 - 60 | KM 7,784 | KM 233,52 |
90 - 480 | KM 6,317 | KM 189,52 |
510 - 960 | KM 5,848 | KM 175,44 |
990+ | KM 5,144 | KM 154,31 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
87 nC @ 10 V
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.15mm
Detalji o proizvodu