STMicroelectronics MDmesh DM2 N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
90 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.15mm
Forward Diode Voltage
1.6V
Detalji o proizvodu
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
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€ 14,40
€ 14,40 Each (bez PDV-a)
€ 16,85
€ 16,85 Each (s PDV-om)
Standard
1
€ 14,40
€ 14,40 Each (bez PDV-a)
€ 16,85
€ 16,85 Each (s PDV-om)
Standard
1
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
| količina | Jedinična cijena |
|---|---|
| 1 - 4 | € 14,40 |
| 5 - 9 | € 13,86 |
| 10 - 24 | € 13,01 |
| 25 - 49 | € 12,20 |
| 50+ | € 12,02 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
90 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.15mm
Forward Diode Voltage
1.6V
Detalji o proizvodu
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda