Tehnička dokumentacija
Tehnički podaci
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
4.3V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
160ns
Peak Non-Repetitive Forward Surge Current
130A
Zemlja podrijetla
China
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
RSD 465
RSD 465 Each (bez PDV-a)
RSD 558
RSD 558 Each (s PDV-om)
Standard
1
RSD 465
RSD 465 Each (bez PDV-a)
RSD 558
RSD 558 Each (s PDV-om)
Standard
1
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena |
---|---|
1 - 9 | RSD 465 |
10 - 49 | RSD 423 |
50 - 99 | RSD 396 |
100 - 249 | RSD 383 |
250+ | RSD 366 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
4.3V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
160ns
Peak Non-Repetitive Forward Surge Current
130A
Zemlja podrijetla
China
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.