Fairchild ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount
Tehnička dokumentacija
Tehnički podaci
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 2.698
RSD 539,522 komadno (u pakovanju od 5) (bez PDV-a)
RSD 3.237
RSD 647,426 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 2.698
RSD 539,522 komadno (u pakovanju od 5) (bez PDV-a)
RSD 3.237
RSD 647,426 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
Kupujte na veliko
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 5 - 5 | RSD 539,522 | RSD 2.698 |
| 10 - 95 | RSD 467,673 | RSD 2.338 |
| 100+ | RSD 377,535 | RSD 1.888 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda