N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB Infineon IRFB7530PBF

RS kataloški broj:: 820-8833brend: InfineonProizvođački broj:: IRFB7530PBF
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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Series

StrongIRFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

274 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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RSD 833

RSD 416,725 komadno (u pakovanju od 2) (bez PDV-a)

RSD 1.000

RSD 500,07 komadno (u pakovanju od 2) (s PDV-om)

N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB Infineon IRFB7530PBF
Odaberite vrstu pakovanja

RSD 833

RSD 416,725 komadno (u pakovanju od 2) (bez PDV-a)

RSD 1.000

RSD 500,07 komadno (u pakovanju od 2) (s PDV-om)

N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB Infineon IRFB7530PBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Kupujte na veliko

količinaJedinična cenaPo pakovanje
2 - 18RSD 416,725RSD 833
20 - 48RSD 374,922RSD 750
50 - 98RSD 369,697RSD 739
100 - 198RSD 356,633RSD 713
200+RSD 342,263RSD 685

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

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  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Series

StrongIRFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

274 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više