P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1

RS kataloški broj:: 462-3247brend: InfineonProizvođački broj:: SPD08P06P
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Tehnička dokumentacija

Tehnički podaci

Channel Type

P

Maximum Continuous Drain Current

8.8 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.5mm

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.3mm

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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You may be interested in
P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1
P.O.A.komadno (u pakovanju od 5) (bez PDV-a)
P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1
P.O.A.komad (isporučivo u Reel) (bez PDV-a)

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Proverite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

RSD 1.032

RSD 103,202 komadno (u pakovanju od 10) (bez PDV-a)

RSD 1.238

RSD 123,842 komadno (u pakovanju od 10) (s PDV-om)

P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1
Odaberite vrstu pakovanja

RSD 1.032

RSD 103,202 komadno (u pakovanju od 10) (bez PDV-a)

RSD 1.238

RSD 123,842 komadno (u pakovanju od 10) (s PDV-om)

P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Kupujte na veliko

količinaJedinična cenaPo pakovanje
10 - 90RSD 103,202RSD 1.032
100 - 490RSD 99,283RSD 993
500 - 990RSD 97,976RSD 980
1000+RSD 95,363RSD 954

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in
P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1
P.O.A.komadno (u pakovanju od 5) (bez PDV-a)
P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1
P.O.A.komad (isporučivo u Reel) (bez PDV-a)

Tehnička dokumentacija

Tehnički podaci

Channel Type

P

Maximum Continuous Drain Current

8.8 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.5mm

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.3mm

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in
P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1
P.O.A.komadno (u pakovanju od 5) (bez PDV-a)
P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1
P.O.A.komad (isporučivo u Reel) (bez PDV-a)