MagnaChip MPMC100B120RH, 7DM-2 , N-Channel Series IGBT Module, 100 A max, 1200 V, Panel Mount
Tehnička dokumentacija
Tehnički podaci
Brand
MagnaChipMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
694 W
Package Type
7DM-2
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Switching Speed
70kHz
Transistor Configuration
Series
Dimensions
94 x 48 x 22mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Korea, Republic Of
Detalji o proizvodu
IGBT Modules, MagnaChip
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Cena na upit
1
Cena na upit
Informacije o stanju skladišta trenutno nisu dostupne.
1
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
MagnaChipMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
694 W
Package Type
7DM-2
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Switching Speed
70kHz
Transistor Configuration
Series
Dimensions
94 x 48 x 22mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Korea, Republic Of
Detalji o proizvodu
IGBT Modules, MagnaChip
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda