Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
260 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Zemlja podrijetla
Malaysia
Detalji o proizvodu
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 28,74
komad (isporučivo u Reel) (bez PDV-a)
RSD 34,488
komad (isporučivo u Reel) (s PDV-om)
200
RSD 28,74
komad (isporučivo u Reel) (bez PDV-a)
RSD 34,488
komad (isporučivo u Reel) (s PDV-om)
200
Kupujte na veliko
količina | Jedinična cena | Po kolut |
---|---|---|
200 - 1400 | RSD 28,74 | RSD 5.748 |
1600+ | RSD 19,595 | RSD 3.919 |
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
260 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Zemlja podrijetla
Malaysia
Detalji o proizvodu