Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
215 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
78 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.1mm
Number of Elements per Chip
1
Length
5mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Philippines
Detalji o proizvodu
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
KM 20,14
KM 4,029 Each (In a Pack of 5) (bez PDV-a)
KM 23,56
KM 4,714 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 20,14
KM 4,029 Each (In a Pack of 5) (bez PDV-a)
KM 23,56
KM 4,714 Each (In a Pack of 5) (s PDV-om)
Standard
5
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Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
215 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
78 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.1mm
Number of Elements per Chip
1
Length
5mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Philippines
Detalji o proizvodu