Tehnička dokumentacija
Tehnički podaci
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Series
SCT2H12NZ
Package Type
TO-3PFM
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
21mm
Forward Diode Voltage
4.3V
Detalji o proizvodu
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 25,955
Each (In a Pack of 2) (bez PDV-a)
KM 30,367
Each (In a Pack of 2) (s PDV-om)
2
KM 25,955
Each (In a Pack of 2) (bez PDV-a)
KM 30,367
Each (In a Pack of 2) (s PDV-om)
2
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
2 - 8 | KM 25,955 | KM 51,91 |
10+ | KM 22,17 | KM 44,34 |
Tehnička dokumentacija
Tehnički podaci
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Series
SCT2H12NZ
Package Type
TO-3PFM
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
21mm
Forward Diode Voltage
4.3V
Detalji o proizvodu