Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 201,178
komadno (u pakovanju od 5) (bez PDV-a)
RSD 241,414
komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 201,178
komadno (u pakovanju od 5) (bez PDV-a)
RSD 241,414
komadno (u pakovanju od 5) (s PDV-om)
Standard
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 20 | RSD 201,178 | RSD 1.006 |
25 - 45 | RSD 193,34 | RSD 967 |
50 - 120 | RSD 182,889 | RSD 914 |
125 - 245 | RSD 169,825 | RSD 849 |
250+ | RSD 168,519 | RSD 843 |
Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalji o proizvodu