Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaTransistor Type
NPN
Maximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
600 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Operating Temperature
+150 °C
Length
10mm
Base Current
1A
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Zemlja podrijetla
Japan
Detalji o proizvodu
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 142,392
komadno (u pakovanju od 10) (bez PDV-a)
RSD 170,87
komadno (u pakovanju od 10) (s PDV-om)
10
RSD 142,392
komadno (u pakovanju od 10) (bez PDV-a)
RSD 170,87
komadno (u pakovanju od 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
10 - 20 | RSD 142,392 | RSD 1.424 |
30+ | RSD 121,49 | RSD 1.215 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaTransistor Type
NPN
Maximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
600 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Operating Temperature
+150 °C
Length
10mm
Base Current
1A
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Zemlja podrijetla
Japan
Detalji o proizvodu