Tehnička dokumentacija
Tehnički podaci
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
16A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
3.93V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
135ns
Peak Non-Repetitive Forward Surge Current
190A
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
RSD 13.390
RSD 1.339 komad (isporucivo u Tubi) (bez PDV-a)
RSD 16.068
RSD 1.607 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
10
RSD 13.390
RSD 1.339 komad (isporucivo u Tubi) (bez PDV-a)
RSD 16.068
RSD 1.607 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
10
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena |
---|---|
10 - 24 | RSD 1.339 |
25 - 49 | RSD 1.254 |
50 - 99 | RSD 1.189 |
100+ | RSD 1.143 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
16A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
3.93V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
135ns
Peak Non-Repetitive Forward Surge Current
190A
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.