Infineon IKW15N120H3FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
217 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.03 x 5.16 x 21.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Zemlja podrijetla
China
Detalji o proizvodu
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 180,90
€ 6,03 Each (In a Tube of 30) (bez PDV-a)
€ 211,65
€ 7,055 Each (In a Tube of 30) (s PDV-om)
30
€ 180,90
€ 6,03 Each (In a Tube of 30) (bez PDV-a)
€ 211,65
€ 7,055 Each (In a Tube of 30) (s PDV-om)
30
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Provjerite ponovno kasnije.
| količina | Jedinična cijena | Po cijev |
|---|---|---|
| 30 - 30 | € 6,03 | € 180,90 |
| 60+ | € 5,81 | € 174,30 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
217 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.03 x 5.16 x 21.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Zemlja podrijetla
China
Detalji o proizvodu
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda