Infineon OptiMOS P P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P407ATMA1

RS kataloški broj:: 826-9487Probna marka: InfineonProizvođački broj:: IPB80P04P407ATMA1
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS P

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10mm

Typical Gate Charge @ Vgs

68 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.25mm

Transistor Material

Si

Number of Elements per Chip

1

Height

4.4mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 259,14

KM 5,183 Each (Supplied on a Reel) (bez PDV-a)

KM 303,19

KM 6,064 Each (Supplied on a Reel) (s PDV-om)

Infineon OptiMOS P P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P407ATMA1
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 25.

Proizvodnja -

Dostupno u više komada 25.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

50

Dostupno u više komada 25
50KM 259,14
75KM 388,72
100KM 518,29
125KM 647,86
150KM 777,43
175KM 907,00
200KM 1.036,57
225KM 1.166,15
250KM 1.295,72
275KM 1.425,29
300KM 1.554,86
325KM 1.684,43
350KM 1.814,00
375KM 1.943,58
400KM 2.073,15

KM 259,14

KM 5,183 Each (Supplied on a Reel) (bez PDV-a)

KM 303,19

KM 6,064 Each (Supplied on a Reel) (s PDV-om)

Infineon OptiMOS P P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P407ATMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 25.

Proizvodnja -

Dostupno u više komada 25.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

50

Dostupno u više komada 25
50KM 259,14
75KM 388,72
100KM 518,29
125KM 647,86
150KM 777,43
175KM 907,00
200KM 1.036,57
225KM 1.166,15
250KM 1.295,72
275KM 1.425,29
300KM 1.554,86
325KM 1.684,43
350KM 1.814,00
375KM 1.943,58
400KM 2.073,15

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

količinaJedinična cijenaPo kolut
50 - 475KM 5,183KM 129,57
500+KM 4,987KM 124,68

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS P

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10mm

Typical Gate Charge @ Vgs

68 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.25mm

Transistor Material

Si

Number of Elements per Chip

1

Height

4.4mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više