Infineon HEXFET N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF

RS kataloški broj:: 302-022Pbrend: InfineonProizvođački broj:: IRLML2803TRPBF
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

540 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

3.3 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

RSD 2.547

RSD 50,948 komad (isporučivo u Reel) (bez PDV-a)

RSD 3.057

RSD 61,138 komad (isporučivo u Reel) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

50

Dostupno u više komada 5
50RSD 2.547
55RSD 2.802
60RSD 3.057
65RSD 3.312
70RSD 3.566
75RSD 3.821
80RSD 4.076
85RSD 4.331
90RSD 4.585
95RSD 4.840
100RSD 5.095
105RSD 5.349
110RSD 5.604
115RSD 5.859
120RSD 6.114

RSD 2.547

RSD 50,948 komad (isporučivo u Reel) (bez PDV-a)

RSD 3.057

RSD 61,138 komad (isporučivo u Reel) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

50

Dostupno u više komada 5
50RSD 2.547
55RSD 2.802
60RSD 3.057
65RSD 3.312
70RSD 3.566
75RSD 3.821
80RSD 4.076
85RSD 4.331
90RSD 4.585
95RSD 4.840
100RSD 5.095
105RSD 5.349
110RSD 5.604
115RSD 5.859
120RSD 6.114

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo kolut
50 - 245RSD 50,948RSD 255
250 - 495RSD 40,497RSD 202
500 - 1245RSD 33,965RSD 170
1250+RSD 30,046RSD 150

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PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

540 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

3.3 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više