Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-220
Series
MDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
4.6mm
Height
15.75mm
Detalji o proizvodu
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
KM 15,39
KM 15,39 Each (bez PDV-a)
KM 18,01
KM 18,01 Each (s PDV-om)
Standard
1
KM 15,39
KM 15,39 Each (bez PDV-a)
KM 18,01
KM 18,01 Each (s PDV-om)
Standard
1
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena |
---|---|
1 - 4 | KM 15,39 |
5 - 9 | KM 14,82 |
10 - 24 | KM 13,89 |
25 - 49 | KM 13,06 |
50+ | KM 12,85 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-220
Series
MDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
4.6mm
Height
15.75mm
Detalji o proizvodu