Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
270 mA
Maximum Drain Source Voltage
60 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
RSD 914
RSD 182,889 komadno (u pakovanju od 5) (bez PDV-a)
RSD 1.097
RSD 219,467 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 914
RSD 182,889 komadno (u pakovanju od 5) (bez PDV-a)
RSD 1.097
RSD 219,467 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 45 | RSD 182,889 | RSD 914 |
50 - 195 | RSD 109,733 | RSD 549 |
200 - 995 | RSD 100,589 | RSD 503 |
1000 - 1995 | RSD 88,832 | RSD 444 |
2000+ | RSD 77,075 | RSD 385 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
270 mA
Maximum Drain Source Voltage
60 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu