Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Height
1.65mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
RSD 283
RSD 283 Each (bez PDV-a)
RSD 340
RSD 340 Each (s PDV-om)
Standard
1
RSD 283
RSD 283 Each (bez PDV-a)
RSD 340
RSD 340 Each (s PDV-om)
Standard
1
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena |
---|---|
1 - 9 | RSD 283 |
10 - 19 | RSD 274 |
20 - 49 | RSD 269 |
50 - 99 | RSD 268 |
100+ | RSD 263 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Height
1.65mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu