Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Series
CoolSiC 2000 V SiC Trench MOSFET
Package Type
PG-TO247-4-PLUS-NT14
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Zemlja podrijetla
Malaysia
RSD 185.502
RSD 18.550 komad (isporucivo u Tubi) (bez PDV-a)
RSD 222.602
RSD 22.260 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
10
RSD 185.502
RSD 18.550 komad (isporucivo u Tubi) (bez PDV-a)
RSD 222.602
RSD 22.260 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
10
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Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Series
CoolSiC 2000 V SiC Trench MOSFET
Package Type
PG-TO247-4-PLUS-NT14
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Zemlja podrijetla
Malaysia