Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
80 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0041 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
KM 49,87
KM 9,975 Each (In a Pack of 5) (bez PDV-a)
KM 58,35
KM 11,671 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 49,87
KM 9,975 Each (In a Pack of 5) (bez PDV-a)
KM 58,35
KM 11,671 Each (In a Pack of 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 20 | KM 9,975 | KM 49,87 |
25 - 45 | KM 9,094 | KM 45,47 |
50 - 120 | KM 8,86 | KM 44,30 |
125 - 245 | KM 8,547 | KM 42,73 |
250+ | KM 8,195 | KM 40,97 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
80 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0041 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si