Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
Transistor Material
Si
RSD 1.881
RSD 94,057 komadno (u pakovanju od 20) (bez PDV-a)
RSD 2.257
RSD 112,868 komadno (u pakovanju od 20) (s PDV-om)
Standard
20
RSD 1.881
RSD 94,057 komadno (u pakovanju od 20) (bez PDV-a)
RSD 2.257
RSD 112,868 komadno (u pakovanju od 20) (s PDV-om)
Standard
20
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
Transistor Material
Si