Infineon OptiMOS P P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1

RS kataloški broj:: 826-9109brend: InfineonProizvođački broj:: IPD50P04P413ATMA1
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS P

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.3mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

RSD 4.344

RSD 173,744 komadno (u pakovanju od 25) (bez PDV-a)

RSD 5.212

RSD 208,493 komadno (u pakovanju od 25) (s PDV-om)

Infineon OptiMOS P P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 25.

Proizvodnja -

Dostupno u više komada 25.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

25

Dostupno u više komada 25
25RSD 4.344
50RSD 6.858
75RSD 10.287
100RSD 13.717
125RSD 16.819
150RSD 20.183
175RSD 23.547
200RSD 26.911
225RSD 30.275
250RSD 32.332
275RSD 35.565
300RSD 38.799
325RSD 42.032
350RSD 45.265
375RSD 48.498

RSD 4.344

RSD 173,744 komadno (u pakovanju od 25) (bez PDV-a)

RSD 5.212

RSD 208,493 komadno (u pakovanju od 25) (s PDV-om)

Infineon OptiMOS P P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 25.

Proizvodnja -

Dostupno u više komada 25.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

25

Dostupno u više komada 25
25RSD 4.344
50RSD 6.858
75RSD 10.287
100RSD 13.717
125RSD 16.819
150RSD 20.183
175RSD 23.547
200RSD 26.911
225RSD 30.275
250RSD 32.332
275RSD 35.565
300RSD 38.799
325RSD 42.032
350RSD 45.265
375RSD 48.498

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo pakovanje
25 - 25RSD 173,744RSD 4.344
50 - 100RSD 137,167RSD 3.429
125 - 225RSD 134,554RSD 3.364
250 - 600RSD 129,329RSD 3.233
625+RSD 125,41RSD 3.135

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS P

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.3mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više