Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Package Type
TO-220
Series
OptiMOS™
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
70 nC @ 10 V
Number of Elements per Chip
1
Width
4.57mm
Length
10.36mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
11.17mm
RSD 1.975
RSD 987,60 komadno (u pakovanju od 2) (bez PDV-a)
RSD 2.370
RSD 1.185,12 komadno (u pakovanju od 2) (s PDV-om)
2
RSD 1.975
RSD 987,60 komadno (u pakovanju od 2) (bez PDV-a)
RSD 2.370
RSD 1.185,12 komadno (u pakovanju od 2) (s PDV-om)
2
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
2 - 8 | RSD 987,60 | RSD 1.975 |
10 - 18 | RSD 951,022 | RSD 1.902 |
20 - 48 | RSD 866,109 | RSD 1.732 |
50 - 98 | RSD 836,063 | RSD 1.672 |
100+ | RSD 800,792 | RSD 1.602 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Package Type
TO-220
Series
OptiMOS™
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
70 nC @ 10 V
Number of Elements per Chip
1
Width
4.57mm
Length
10.36mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
11.17mm