Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF

RS kataloški broj:: 130-0948Probna marka: InfineonProizvođački broj:: IRF6648TRPBF
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

60 V

Series

DirectFET, HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.05mm

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.5mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.3V

Detalji o proizvodu

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 101,70

KM 5,085 Each (Supplied on a Reel) (bez PDV-a)

KM 118,99

KM 5,949 Each (Supplied on a Reel) (s PDV-om)

Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 2
20KM 101,70
22KM 111,87
24KM 122,04
26KM 132,21
28KM 142,38
30KM 152,55
32KM 162,72
34KM 172,89
36KM 183,06
38KM 193,23
40KM 203,40
42KM 213,57
44KM 223,74
46KM 233,91
48KM 244,08

KM 101,70

KM 5,085 Each (Supplied on a Reel) (bez PDV-a)

KM 118,99

KM 5,949 Each (Supplied on a Reel) (s PDV-om)

Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 2
20KM 101,70
22KM 111,87
24KM 122,04
26KM 132,21
28KM 142,38
30KM 152,55
32KM 162,72
34KM 172,89
36KM 183,06
38KM 193,23
40KM 203,40
42KM 213,57
44KM 223,74
46KM 233,91
48KM 244,08

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

količinaJedinična cijenaPo kolut
20 - 48KM 5,085KM 10,17
50 - 98KM 4,987KM 9,97
100 - 198KM 4,792KM 9,58
200+KM 4,596KM 9,19

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

60 V

Series

DirectFET, HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.05mm

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.5mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.3V

Detalji o proizvodu

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više