Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 5.4 A, 100 V, 8-Pin SO-8 IRF7490TRPBF

Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.039 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
RSD 266.495
RSD 66,624 komad (u Reel od 4000) (bez PDV-a)
RSD 319.794
RSD 79,949 komad (u Reel od 4000) (s PDV-om)
4000
RSD 266.495
RSD 66,624 komad (u Reel od 4000) (bez PDV-a)
RSD 319.794
RSD 79,949 komad (u Reel od 4000) (s PDV-om)
4000
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.039 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2