Infineon HEXFET P-Channel MOSFET, 12 A, 55 V, 3-Pin TO-220AB IRF9Z24NPBF

RS kataloški broj:: 541-0799brend: InfineonProizvođački broj:: IRF9Z24NPBFDistrelec Article No.: 30341312
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

4.69mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.54mm

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.6V

Height

8.77mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

RSD 135

RSD 135 Each (bez PDV-a)

RSD 161

RSD 161 Each (s PDV-om)

Infineon HEXFET P-Channel MOSFET, 12 A, 55 V, 3-Pin TO-220AB IRF9Z24NPBF
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1RSD 135
2RSD 269
3RSD 404
4RSD 538
5RSD 673
6RSD 807
7RSD 942
8RSD 1.076
9RSD 1.211
10RSD 1.346
11RSD 1.480
12RSD 1.615
13RSD 1.749
14RSD 1.884
15RSD 2.018

RSD 135

RSD 135 Each (bez PDV-a)

RSD 161

RSD 161 Each (s PDV-om)

Infineon HEXFET P-Channel MOSFET, 12 A, 55 V, 3-Pin TO-220AB IRF9Z24NPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1RSD 135
2RSD 269
3RSD 404
4RSD 538
5RSD 673
6RSD 807
7RSD 942
8RSD 1.076
9RSD 1.211
10RSD 1.346
11RSD 1.480
12RSD 1.615
13RSD 1.749
14RSD 1.884
15RSD 2.018

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cena
1 - 24RSD 135
25 - 49RSD 114
50 - 249RSD 111
250+RSD 105

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  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

4.69mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.54mm

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.6V

Height

8.77mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in