Infineon StrongIRFET N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-220AB IRFB7430PBF

RS kataloški broj:: 776-9172Probna marka: InfineonProizvođački broj:: IRFB7430PBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

40 V

Series

StrongIRFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

460 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

16.51mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 7,73

KM 7,73 Each (Supplied in a Tube) (bez PDV-a)

KM 9,04

KM 9,04 Each (Supplied in a Tube) (s PDV-om)

Infineon StrongIRFET N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-220AB IRFB7430PBF
Odaberite vrstu pakovanja

Proizvodno pakovanje (cijev)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1KM 7,73
2KM 15,45
3KM 23,18
4KM 30,90
5KM 38,63
6KM 46,35
7KM 54,08
8KM 61,80
9KM 69,53
10KM 77,25
11KM 84,98
12KM 92,70
13KM 100,43
14KM 108,16
15KM 115,88

KM 7,73

KM 7,73 Each (Supplied in a Tube) (bez PDV-a)

KM 9,04

KM 9,04 Each (Supplied in a Tube) (s PDV-om)

Infineon StrongIRFET N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-220AB IRFB7430PBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (cijev)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1KM 7,73
2KM 15,45
3KM 23,18
4KM 30,90
5KM 38,63
6KM 46,35
7KM 54,08
8KM 61,80
9KM 69,53
10KM 77,25
11KM 84,98
12KM 92,70
13KM 100,43
14KM 108,16
15KM 115,88

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

40 V

Series

StrongIRFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

460 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

16.51mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više