Infineon HEXFET N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF

RS kataloški broj:: 639-1857Pbrend: InfineonProizvođački broj:: IRFP90N20DPBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

94 A

Maximum Drain Source Voltage

200 V

Series

HEXFET

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

580 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

180 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.9mm

Maximum Operating Temperature

+175 °C

Height

20.3mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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RSD 1.091

RSD 1.091 komad (isporucivo u Tubi) (bez PDV-a)

RSD 1.309

RSD 1.309 komad (isporucivo u Tubi) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF
Odaberite vrstu pakovanja

Proizvodno pakovanje (cev)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1RSD 1.091
2RSD 2.182
3RSD 3.272
4RSD 4.363
5RSD 5.454
6RSD 6.545
7RSD 7.636
8RSD 8.726
9RSD 9.817
10RSD 10.908
11RSD 11.999
12RSD 13.090
13RSD 14.180
14RSD 15.271
15RSD 16.362

RSD 1.091

RSD 1.091 komad (isporucivo u Tubi) (bez PDV-a)

RSD 1.309

RSD 1.309 komad (isporucivo u Tubi) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (cev)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1RSD 1.091
2RSD 2.182
3RSD 3.272
4RSD 4.363
5RSD 5.454
6RSD 6.545
7RSD 7.636
8RSD 8.726
9RSD 9.817
10RSD 10.908
11RSD 11.999
12RSD 13.090
13RSD 14.180
14RSD 15.271
15RSD 16.362

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

94 A

Maximum Drain Source Voltage

200 V

Series

HEXFET

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

580 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

180 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.9mm

Maximum Operating Temperature

+175 °C

Height

20.3mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više