Infineon HEXFET P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
3.4 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.04mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Thailand
Detalji o proizvodu
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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RSD 47.029
RSD 15,676 komad (u Reel od 3000) (bez PDV-a)
RSD 56.434
RSD 18,811 komad (u Reel od 3000) (s PDV-om)
3000
RSD 47.029
RSD 15,676 komad (u Reel od 3000) (bez PDV-a)
RSD 56.434
RSD 18,811 komad (u Reel od 3000) (s PDV-om)
3000
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
| količina | Jedinična cena | Po kolut |
|---|---|---|
| 3000 - 6000 | RSD 15,676 | RSD 47.029 |
| 9000+ | RSD 14,37 | RSD 43.110 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
3.4 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.04mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Thailand
Detalji o proizvodu
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda