IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSMaximum Continuous Collector Current
430 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
625 W
Package Type
TO-247AD
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
5 → 30kHz
Transistor Configuration
Single
Dimensions
16.1 x 5.2 x 21.3mm
Maximum Operating Temperature
+175 °C
Energy Rating
5.2mJ
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Philippines
Detalji o proizvodu
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Cijena na upit
Each (In a Tube of 30) (bez PDV-a)
30
Cijena na upit
Each (In a Tube of 30) (bez PDV-a)
30
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Tehnička dokumentacija
Tehnički podaci
Brand
IXYSMaximum Continuous Collector Current
430 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
625 W
Package Type
TO-247AD
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
5 → 30kHz
Transistor Configuration
Single
Dimensions
16.1 x 5.2 x 21.3mm
Maximum Operating Temperature
+175 °C
Energy Rating
5.2mJ
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Philippines
Detalji o proizvodu
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda