Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
500 A
Maximum Drain Source Voltage
75 V
Package Type
SMPD
Series
GigaMOS, HiperFET
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
25.25mm
Typical Gate Charge @ Vgs
545 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
23.25mm
Height
5.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Detalji o proizvodu
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
KM 993,94
KM 49,697 Each (In a Tube of 20) (bez PDV-a)
KM 1.162,91
KM 58,145 Each (In a Tube of 20) (s PDV-om)
20
KM 993,94
KM 49,697 Each (In a Tube of 20) (bez PDV-a)
KM 1.162,91
KM 58,145 Each (In a Tube of 20) (s PDV-om)
20
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Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
500 A
Maximum Drain Source Voltage
75 V
Package Type
SMPD
Series
GigaMOS, HiperFET
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
25.25mm
Typical Gate Charge @ Vgs
545 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
23.25mm
Height
5.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.25V
Detalji o proizvodu
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS