Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
30 V
Series
NX3008NBKW
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
RSD 3.005
RSD 30,046 komadno (u pakovanju od 100) (bez PDV-a)
RSD 3.606
RSD 36,055 komadno (u pakovanju od 100) (s PDV-om)
Standard
100
RSD 3.005
RSD 30,046 komadno (u pakovanju od 100) (bez PDV-a)
RSD 3.606
RSD 36,055 komadno (u pakovanju od 100) (s PDV-om)
Standard
100
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
100 - 500 | RSD 30,046 | RSD 3.005 |
600 - 1400 | RSD 23,514 | RSD 2.351 |
1500+ | RSD 19,595 | RSD 1.960 |
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
30 V
Series
NX3008NBKW
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu