onsemi N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 NDS7002A

RS kataloški broj:: 671-1093Pbrend: onsemiProizvođački broj:: NDS7002A
brand-logo
Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.92mm

Height

0.93mm

Minimum Operating Temperature

-65 °C

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
Informacije o stanju skladišta trenutno nisu dostupne.

RSD 2.482

RSD 24,821 komad (isporučivo u Reel) (bez PDV-a)

RSD 2.978

RSD 29,785 komad (isporučivo u Reel) (s PDV-om)

onsemi N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 NDS7002A
Odaberite vrstu pakovanja

RSD 2.482

RSD 24,821 komad (isporučivo u Reel) (bez PDV-a)

RSD 2.978

RSD 29,785 komad (isporučivo u Reel) (s PDV-om)

onsemi N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 NDS7002A
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo kolut
100 - 240RSD 24,821RSD 248
250 - 490RSD 22,208RSD 222
500 - 990RSD 19,595RSD 196
1000+RSD 18,289RSD 183

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.92mm

Height

0.93mm

Minimum Operating Temperature

-65 °C

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više