Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
11.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
RSD 954
RSD 95,363 komadno (u pakovanju od 10) (bez PDV-a)
RSD 1.144
RSD 114,436 komadno (u pakovanju od 10) (s PDV-om)
Standard
10
RSD 954
RSD 95,363 komadno (u pakovanju od 10) (bez PDV-a)
RSD 1.144
RSD 114,436 komadno (u pakovanju od 10) (s PDV-om)
Standard
10
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Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
11.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu