Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
252 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
134 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.25mm
Length
5mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.2mm
Automotive Standard
AEC-Q101
Zemlja podrijetla
Philippines
RSD 1.359
RSD 339,651 komad (isporučivo u Reel) (bez PDV-a)
RSD 1.630
RSD 407,581 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
4
RSD 1.359
RSD 339,651 komad (isporučivo u Reel) (bez PDV-a)
RSD 1.630
RSD 407,581 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
4
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Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
252 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
134 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.25mm
Length
5mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.2mm
Automotive Standard
AEC-Q101
Zemlja podrijetla
Philippines