Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Series
SQ Rugged
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
RSD 4.285
RSD 428,482 komadno (u pakovanju od 10) (bez PDV-a)
RSD 5.142
RSD 514,178 komadno (u pakovanju od 10) (s PDV-om)
Standard
10
RSD 4.285
RSD 428,482 komadno (u pakovanju od 10) (bez PDV-a)
RSD 5.142
RSD 514,178 komadno (u pakovanju od 10) (s PDV-om)
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
10 - 40 | RSD 428,482 | RSD 4.285 |
50 - 90 | RSD 347,489 | RSD 3.475 |
100 - 240 | RSD 317,443 | RSD 3.174 |
250 - 490 | RSD 305,686 | RSD 3.057 |
500+ | RSD 265,189 | RSD 2.652 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Series
SQ Rugged
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu