Vishay SQ Rugged N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK SQD40N06-14L_GE3
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
60 V
Series
SQ Rugged
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Automotive Standard
AEC-Q101
Detalji o proizvodu
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Approvals
AEC-Q101
MOSFET Transistors, Vishay Semiconductor
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€ 13,75
€ 2,75 Each (In a Pack of 5) (bez PDV-a)
€ 16,09
€ 3,218 Each (In a Pack of 5) (s PDV-om)
Standard
5
€ 13,75
€ 2,75 Each (In a Pack of 5) (bez PDV-a)
€ 16,09
€ 3,218 Each (In a Pack of 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 45 | € 2,75 | € 13,75 |
| 50 - 120 | € 2,52 | € 12,60 |
| 125 - 245 | € 2,47 | € 12,35 |
| 250 - 495 | € 2,42 | € 12,10 |
| 500+ | € 2,36 | € 11,80 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
60 V
Series
SQ Rugged
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Automotive Standard
AEC-Q101
Detalji o proizvodu
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Approvals
AEC-Q101
MOSFET Transistors, Vishay Semiconductor
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda